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igbt highspeedduopack:igbtintrenchandfieldstoptechnologywithsoft,fastrecovery anti-paralleldiode IKW25N120H3 1200vhighspeedswitchingseriesthirdgeneration datasheet industrialpowercontrol
2 IKW25N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-12-01 highspeedduopack:igbtintrenchandfieldstoptechnologywithsoft,fast recoveryanti-paralleldiode features: trenchstop tm technologyoffering ?verylowv cesat ?lowemi ?verysoft,fastrecoveryanti-paralleldiode ?maximumjunctiontemperature175c ?qualifiedaccordingtojedecfortargetapplications ?pb-freeleadplating;rohscompliant ?completeproductspectrumandpspicemodels: http://www.infineon.com/igbt/ applications: ?uninterruptiblepowersupplies ?weldingconverters ?converterswithhighswitchingfrequency keyperformanceandpackageparameters type v ce i c v cesat , t vj =25c t vjmax marking package IKW25N120H3 1200v 25a 2.05v 175c k25h1203 pg-to247-3 g c e g c e
3 IKW25N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-12-01 tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 g c e g c e
4 IKW25N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-12-01 maximumratings foroptimumlifetimeandreliability,infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. parameter symbol value unit collector-emitter voltage v ce 1200 v dccollectorcurrent,limitedby t vjmax t c =25c t c =100c i c 50.0 25.0 a pulsedcollectorcurrent, t p limitedby t vjmax i cpuls 100.0 a turnoffsafeoperatingarea v ce 1200v, t vj 175c - 100.0 a diodeforwardcurrent,limitedby t vjmax t c =25c t c =100c i f 25.0 12.5 a diodepulsedcurrent, t p limitedby t vjmax i fpuls 100.0 a gate-emitter voltage v ge 20 v short circuit withstand time v ge =15.0v, v cc 600v allowed number of short circuits < 1000 time between short circuits: 3 1.0s t vj =175c t sc 10 s powerdissipation t c =25c powerdissipation t c =100c p tot 326.0 156.0 w operating junction temperature t vj -40...+175 c storage temperature t stg -55...+150 c soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s 260 c mounting torque, m3 screw maximum of mounting processes: 3 m 0.6 nm thermalresistance parameter symbol conditions max.value unit characteristic igbt thermal resistance, junction - case r th(j-c) 0.46 k/w diode thermal resistance, junction - case r th(j-c) 1.49 k/w thermal resistance junction - ambient r th(j-a) 40 k/w g c e g c e
5 IKW25N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-12-01 electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit staticcharacteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =0.50ma 1200 - - v collector-emitter saturation voltage v cesat v ge =15.0v, i c =25.0a t vj =25c t vj =125c t vj =175c - - - 2.05 2.50 2.70 2.40 - - v diode forward voltage v f v ge =0v, i f =12.5a t vj =25c t vj =175c - - 1.80 1.85 2.35 - v diode forward voltage v f v ge =0v, i f =25.0a t vj =25c t vj =125c t vj =175c - - - 2.40 2.60 2.60 3.05 - - v gate-emitter threshold voltage v ge(th) i c =0.85ma, v ce = v ge 5.0 5.8 6.5 v zero gate voltage collector current i ces v ce =1200v, v ge =0v t vj =25c t vj =175c - - - - 250.0 2500.0 a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 600 na transconductance g fs v ce =20v, i c =25.0a - 13.0 - s electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit dynamiccharacteristic input capacitance c ies - 1430 - output capacitance c oes - 115 - reverse transfer capacitance c res - 75 - v ce =25v, v ge =0v,f=1mhz pf gate charge q g v cc =960v, i c =25.0a, v ge =15v - 115.0 - nc internal emitter inductance measured 5mm (0.197 in.) from case l e - 13.0 - nh short circuit collector current max. 1000 short circuits time between short circuits: 3 1.0s i c(sc) v ge =15.0v, v cc 600v, t sc 10s t vj =175c - 87 - a g c e g c e
6 IKW25N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-12-01 switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =25c turn-on delay time t d(on) - 27 - ns rise time t r - 41 - ns turn-off delay time t d(off) - 277 - ns fall time t f - 17 - ns turn-on energy e on - 1.80 - mj turn-off energy e off - 0.85 - mj total switching energy e ts - 2.65 - mj t vj =25c, v cc =600v, i c =25.0a, v ge =0.0/15.0v, r g(on) =23.0 w , r g(off) =23.0 w , l s =80nh, c s =67pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. diodecharacteristic,at t vj =25c diode reverse recovery time t rr - 290 - ns diode reverse recovery charge q rr - 1.20 - c diode peak reverse recovery current i rrm - 10.4 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -150 - a/s t vj =25c, v r =600v, i f =25.0a, di f /dt =500a/s switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =175c turn-on delay time t d(on) - 26 - ns rise time t r - 35 - ns turn-off delay time t d(off) - 347 - ns fall time t f - 50 - ns turn-on energy e on - 2.60 - mj turn-off energy e off - 1.70 - mj total switching energy e ts - 4.30 - mj t vj =175c, v cc =600v, i c =25.0a, v ge =0.0/15.0v, r g(on) =23.0 w , r g(off) =23.0 w , l s =80nh, c s =67pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. diodecharacteristic,at t vj =175c diode reverse recovery time t rr - 505 - ns diode reverse recovery charge q rr - 2.75 - c diode peak reverse recovery current i rrm - 12.8 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -85 - a/s t vj =175c, v r =600v, i f =25.0a, di f /dt =500a/s g c e g c e
7 IKW25N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-12-01 figure 1. collectorcurrentasafunctionofswitching frequency ( t j 175c, d =0.5, v ce =600v, v ge =15/0v, r g =23 w ) f ,switchingfrequency[khz] i c ,collectorcurrent[a] 1 10 100 1000 0 10 20 30 40 50 60 70 80 90 100 110 t c =80 t c =110 t c =80 t c =110 figure 2. forwardbiassafeoperatingarea ( d =0, t c =25c, t j 175c; v ge =15v) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 1 10 100 1000 0.1 1 10 100 t p =1s 10s 50s 100s 200s 500s dc figure 3. powerdissipationasafunctionofcase temperature ( t j 175c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 50 100 150 200 250 300 350 figure 4. collectorcurrentasafunctionofcase temperature ( v ge 3 15v, t j 175c) t c ,casetemperature[c] i c ,collectorcurrent[a] 25 50 75 100 125 150 175 0 10 20 30 40 50 g c e g c e
8 IKW25N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-12-01 figure 5. typicaloutputcharacteristic ( t j =25c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 2 4 6 0 20 40 60 80 100 v ge =20v 17v 15v 13v 11v 9v 7v 5v figure 6. typicaloutputcharacteristic ( t j =175c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 2 4 6 8 0 20 40 60 80 100 v ge =20v 17v 15v 13v 11v 9v 7v 5v figure 7. typicaltransfercharacteristic ( v ce =20v) v ge ,gate-emittervoltage[v] i c ,collectorcurrent[a] 5 10 15 0 15 30 45 60 75 t j =25c t j =175c figure 8. typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature ( v ge =15v) t j ,junctiontemperature[c] v ce(sat) ,collector-emittersaturation[v] 0 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 i c =12.5a i c =25a i c =50a g c e g c e
9 IKW25N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-12-01 figure 9. typicalswitchingtimesasafunctionof collectorcurrent (ind.load, t j =175c, v ce =600v, v ge =15/0v, r g =23 w ,testcircuitinfig.e) i c ,collectorcurrent[a] t ,switchingtimes[ns] 5 15 25 35 45 10 100 1000 t d(off) t f t d(on) t r figure 10. typicalswitchingtimesasafunctionofgate resistor (ind.load, t j =175c, v ce =600v, v ge =15/0v, i c =25a,testcircuitinfig.e) r g ,gateresistor[ w ] t ,switchingtimes[ns] 5 15 25 35 45 55 65 10 100 1000 t d(off) t f t d(on) t r figure 11. typicalswitchingtimesasafunctionof junctiontemperature (ind.load, v ce =600v, v ge =15/0v, i c =25a, r g =23 w ,testcircuitinfig.e) t j ,junctiontemperature[c] t ,switchingtimes[ns] 0 25 50 75 100 125 150 175 10 100 1000 t d(off) t f t d(on) t r figure 12. gate-emitterthresholdvoltageasafunction ofjunctiontemperature ( i c =0.85ma) t j ,junctiontemperature[c] v ge(th) ,gate-emitterthresholdvoltage[v] 0 25 50 75 100 125 150 175 2 3 4 5 6 7 typ. min. max. g c e g c e
10 IKW25N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-12-01 figure 13. typicalswitchingenergylossesasa functionofcollectorcurrent (ind.load, t j =175c, v ce =600v, v ge =15/0v, r g =23 w ,testcircuitinfig.e) i c ,collectorcurrent[a] e ,switchingenergylosses[mj] 5 15 25 35 45 0 2 4 6 8 10 12 e off e on e ts figure 14. typicalswitchingenergylossesasa functionofgateresistor (ind.load, t j =175c, v ce =600v, v ge =15/0v, i c =25a,testcircuitinfig.e) r g ,gateresistor[ w ] e ,switchingenergylosses[mj] 5 15 25 35 45 55 65 0 1 2 3 4 5 6 7 e off e on e ts figure 15. typicalswitchingenergylossesasa functionofjunctiontemperature (indload, v ce =600v, v ge =15/0v, i c =25a, r g =23 w ,testcircuitinfig.e) t j ,junctiontemperature[c] e ,switchingenergylosses[mj] 0 25 50 75 100 125 150 175 0 1 2 3 4 e off e on e ts figure 16. typicalswitchingenergylossesasa functionofcollectoremittervoltage (ind.load, t j =175c, v ge =15/0v, i c =25a, r g =23 w ,testcircuitinfig.e) v ce ,collector-emittervoltage[v] e ,switchingenergylosses[mj] 400 500 600 700 800 0 1 2 3 4 5 6 e off e on e ts g c e g c e
11 IKW25N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-12-01 figure 17. typicalgatecharge ( i c =25a) q ge ,gatecharge[nc] v ge ,gate-emittervoltage[v] 0 20 40 60 80 100 120 0 2 4 6 8 10 12 14 16 240v 960v figure 18. typicalcapacitanceasafunctionof collector-emittervoltage ( v ge =0v,f=1mhz) v ce ,collector-emittervoltage[v] c ,capacitance[pf] 0 10 20 30 10 100 1000 c ies c oes c res figure 19. typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage ( v ce 600v,startat t j =25c) v ge ,gate-emittervoltage[v] i c(sc) ,shortcircuitcollectorcurrent[a] 10 12 14 16 18 20 40 60 80 100 120 140 160 180 figure 20. shortcircuitwithstandtimeasafunctionof gate-emittervoltage ( v ce 600v,startat t j 150c) v ge ,gate-emittervoltage[v] t sc ,shortcircuitwithstandtime[s] 10 12 14 16 18 20 0 10 20 30 40 50 g c e g c e
12 IKW25N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-12-01 figure 21. igbttransientthermalimpedance ( d = t p /t) t p ,pulsewidth[s] z thjc ,transientthermalimpedance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.001 0.01 0.1 1 d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.08133 2.6e-4 2 0.09366 1.7e-3 3 0.22305 0.01009673 4 0.05925 0.0336145 5 5.7e-3 0.2730749 figure 22. diodetransientthermalimpedanceasa functionofpulsewidth ( d = t p /t) t p ,pulsewidth[s] z thjc ,transientthermalimpedance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.001 0.01 0.1 1 d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.3921 2.5e-4 2 0.5592 1.6e-3 3 0.4557 9.0e-3 4 0.077415 0.03875911 5 9.0e-3 0.2738223 figure 23. typicalreverserecoverytimeasafunction ofdiodecurrentslope ( v r =600v) di f /dt ,diodecurrentslope[a/s] t rr ,reverserecoverytime[ns] 200 400 600 800 1000 1200 1400 1600 200 300 400 500 600 700 t j =25c, i f = 25a t j =175c, i f = 25a figure 24. typicalreverserecoverychargeasa functionofdiodecurrentslope ( v r =600v) di f /dt ,diodecurrentslope[a/s] q rr ,reverserecoverycharge[c] 200 600 1000 1400 1800 0 1 2 3 t j =25c, i f = 25a t j =175c, i f = 25a g c e g c e
13 IKW25N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-12-01 figure 25. typicalreverserecoverycurrentasa functionofdiodecurrentslope ( v r =600v) di f /dt ,diodecurrentslope[a/s] i rr ,reverserecoverycurrent[a] 200 600 1000 1400 1800 4 6 8 10 12 14 16 18 t j =25c, i f = 25a t j =175c, i f = 25a figure 26. typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope ( v r =600v) di f /dt ,diodecurrentslope[a/s] di rr /dt ,diodepeakrateoffallof i rr [a/s] 200 600 1000 1400 1800 -400 -300 -200 -100 0 t j =25c, i f = 25a t j =175c, i f = 25a figure 27. typicaldiodeforwardcurrentasafunction offorwardvoltage v f ,forwardvoltage[v] i f ,forwardcurrent[a] 0 1 2 3 4 5 0 20 40 60 80 100 120 t j =25c t j =175c figure 28. typicaldiodeforwardvoltageasafunction ofjunctiontemperature t j ,junctiontemperature[c] v f ,forwardvoltage[v] 0 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 3.5 4.0 i f =6.25a i f =12.5a i f =25a g c e g c e
14 IKW25N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-12-01 g c e g c e pg-to247-3
15 IKW25N120H3 highspeedswitchingseriesthirdgeneration rev.2.1,2014-12-01 g c e g c e pg-to247-3 t a a b b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge v ge (t) t t i c (t) v ce (t) 90% v ge v ge (t) t t v ce (t) t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i c (t) parasitic inductance l , parasitic capacitor l , relief capacitor c , (only for zvt switching) s s r
16 IKW25N120H3 high speed switching series third generation rev. 2.1, 2014-12-01 revision history IKW25N120H3 previous revision revision date subjects (major changes since last revision) 1.1 2009-11-27 - 1.2 2010-02-10 - 2.1 2014-12-01 final data sheet g c e g c e pg-to247-3 t a a b b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge v ge (t) t t i c (t) v ce (t) 90% v ge v ge (t) t t v ce (t) t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i c (t) parasitic inductance l , parasitic capacitor l , relief capacitor c , (only for zvt switching) s s r

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